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Test Grade silicon wafer

Update time:2017-06-02 19:00:10The number of clicks: 3637
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Parameter

Test grade

Diameter

2’’±0.015’’

3’’±0.02’’

4’’±0.019’’

5’’± 0.019’’

6’’± 0.019’’

Thickness

279±25um (Stranard)

381±50um (Stranard)

525±25um (Stranard)

279±50um (Stranard)

279±50um (Stranard)

TTV

<15um

<15um

<15um

<15um

<15um

BOW

<38um

<40um

<40um

<50um

<50um

WARP

<38um

<40um

<40um

<50um

<50um

Edge Rounding

SEMI-STD

Marking

Primary SEMI-flat only ,SEMI-STD Flats


Parameter

Characteristic

Type/Dopant

P, Boron; N, Phosphorous; N, Antimony;N, Arsenic

Orientation

<100>,<111>

Slice off orientations per customer’s specifications

Oxygen Content

10-19 ppmA

Custom tolerances per customer’s specification

Carbon Content

0.6 ppmA

Resistivity ranges

- P, Boron

- N, Phosphorous

- N, Antimony

- N, Arsenic

0.001-50 ohm.cm

0.1-40 ohm.cm

0.005-0.025 ohm.cm

0.005 ohm.cm

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